1

Capacitance analysis of devices with electrically floating regions

Year:
2004
Language:
english
File:
PDF, 599 KB
english, 2004
3

Solid: High-voltage, high-gain 300 nm channel-length MOSFETs—I. Simulation

Year:
1985
Language:
english
File:
PDF, 908 KB
english, 1985
4

A write-operation model for the FCAT-II-A 50 NS at 15 V alterable nonvolatile memory

Year:
1984
Language:
english
File:
PDF, 579 KB
english, 1984
6

Characteristics of Silicon Wafer-Bond Strengthening by Annealing

Year:
1992
Language:
english
File:
PDF, 1.65 MB
english, 1992
8

Lattice Defects in High-Dose As Implantation into Localized Si Area

Year:
1988
Language:
english
File:
PDF, 1.21 MB
english, 1988